GaN Crystal RF Device Data sheet

PublishTime：2022-01-10

●GaN is inherently reliable Wurtzite Crystal:
■high biding energy
●Dislocations in GaN is benign Lasers stable with 100x more dislocation than other semiconductors
●Intrinsic device reliability has been proven in RF applications
●Learn from experience in RF devices Epi quality for high m& low leakage Passivation guidelines for low trapping Principle of electric field management Basic fabrication process
●Challenges:
High voltage epi/ device designs & process realization
New operation space exceeding traditional package schemes
Stringent qualification requirement
GaN RF Device Reliability
GaN Crystal Structure

Brand of Product：	Transphorm
Part#：
Product Category：	GaN Crystal 、 GaN RF Device 、 GaNMotor Drive Inverter More
Application：	[ EV ][ HEV ] More
Data Type：	Supplier and Product Introduction More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2013/3/19
Version Number：
Data Encoding：
Data Size：	1.4 MB

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