Development Board EPC90139 Quick Start Guide

2021-12-29
The EPC90139 is a half bridge development board with on board gate drives, featuring the 40 V rated EPC2069 GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2069 by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies.
The EPC90139 development board measures 2” x 2” and contains two EPC2069 GaN FET in a half bridge configuration and one EPC2038 GaN FET used to augment the bootstrap supply. The EPC90139 features the uPI Semiconductor uP1966A gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure .

EPC

EPC90139EPC2069C1608X7R1E105K080ABCC0402KRX7R8BB104C1005X7R1E223K050BBCC0402KRX7R9BB101C1005X5R1A475K050BCCC0402JRNP09BN470HMK107C7224KAHTE08051C105K4Z2ATBDSS2PH10-M3CD0603-Z5V1SDM03U40-7BAT54KFILM73415206367997-272HLF6912164100024-103185-0-044-103185-0-02GRPB032VWVN-RCM542030005M50-2020005EPC90139B5268EPC2038RMCF0402ZT0R00ERJ-2GEJ4R7XERJ-2GEJ273XRMCF0402JT20R0ERJ-2GEJ2R2XRC0402FR-0710KLERJ-3GEY0R00VRC0402FR-071RLRC0603FR-07120RL9774010243R5015uP1966AMCP1703T-5002E/MC74LVC1G99GT,115SN74LVC1G66DBV

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Part#

half bridge development boardGaN field effect transistorHalf-bridge with Gate Drive

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User's Guide

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2021/12/2

Revision 1.0

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