Development Board EPC9013 Quick Start Guide
The EPC9013 development board features the 100 V EPC2001Cenhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation process of the EPC2001CeGaN FET for high current operation by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9013 development board is 2” x 2” and features eight EPC2001CeGaN FETs using the Texas Instruments LM5113 gate driver. The development board configuration is recommended for high current applications. The board contains all critical components and the printed circuit board (PCB) layout is designed for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and evaluate eGaN FET efficiency. A complete block diagram of the circuit is given in Figure 1.
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User's Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/17 |
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4.3 MB |
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