Paralleling of Nexperia GaN FETs in half-bridge topology application note
This appplication note explains the recommendations for circuit design and PCB layout whenparalleling Nexperia TO-247 GaN FETs in a half-bridge configuration.
●Introduction:
■GaN FETs are becoming increasingly important for modern power conversion systems, examples being inverters, power supplies and on-board chargers.
●Summary:
By using careful layout, short and impedance balanced gate drives, correctly placed DC Bus snubbers and decoupling, it is possible to achieve excellent current sharing in paralleled GaN FETs driving an inductive load. This has been effectively shown using leaded parts on a 4-layer FR4PCB.
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[ inverters ][ power supplies ][ on-board chargers ] |
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Application note & Design Guide |
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Please see the document for details |
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TO-247;PHE450_2U;C1206;C1812;C1210;C2225;COOL_INNO_1;KEYSTONE_7691;R1206;C0603;C0805;DO-214AC;SOT23;D0805;BU-SMA-G;R0805;R0603;SOT223-3;SOIC8;TSSOP-5 |
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English Chinese Chinese and English Japanese |
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19 October 2021 |
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Rev. 2.0 |
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AN90030 |
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2.1 MB |
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