Paralleling of Nexperia GaN FETs: How to overcome challenges in Paralleling GaNFETs and increase the power capability of a Power design
■Symmetrical placement of components, tracking and Gate-Source loops is KEYso that the effective impedance paths are as matched as much as possible.
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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September 2021 |
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3.5 MB |
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