HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 600V, SMPS Series N-Channel IGBT

PublishTime：2021-10-26

●The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.
●This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
●Formerly Developmental Type TA49331.
●Features:
■>100kHz Operation at 390V, 7A
■200kHz Operation at 390V, 5A
■600V Switching SOA Capability
■Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at T-J = 125°C
■Low Conduction Loss

Brand of Product：	ON Semiconductor
Part#：	HGT1S7N60A4S9A 、 HGTG7N60A4 、 HGTP7N60A4 More Part#
Product Category：	N-Channel IGBT More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-263AB;TO-247;TO-220AB
Language：	English Chinese Chinese and English Japanese
Date of Creation：	November-2017
Version Number：	Rev. 2
Data Encoding：	HGTP7N60A4/D
Data Size：	305 KB

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