Reliability Qualification Report for LPDDR1 SDRAM with Pb/Halogen Free(45nm 512M LPDDR1AS4C32M16MD1A-5BCN)

2021-10-15
■The method of determining a product' s failure rate is through the use of accelerated high temperature operation life tests. performed.
●Temperature Acceleration is determined by TAF = exp[(Ea/k x 1/Tu-1/Ts)]
◆K is Boltzmann’s constant(8617e-5 ev/K, Ea is the activation energy in eV
●Voltage Acceleration is described by VAF = exp[B x (Vs – Vu)]
◆B is the voltage acceleration term in 1/V.
●Acceleration Factor = TAF(t) * AF
◆Long time Failure Rate (1~10 years) for 1 technology is gauged by a Failure In Time (FIT) calculation based on accelerated stress data.
◆The units for FIT are failures per Billion device hours.
●Mean Time To Failure (MTTF) = (1/FITs) x 10e9 @ 60% confide

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AS4C32M16MD1A-5BCN

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LPDDR1 SDRAM

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Test Report

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2021/10/01

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