FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ

2021-10-12
●Description: This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
●Features:
■52.4 A, 60 V, R-DS(on) = 21 mΩ (Max.) @ V-GS = 10 V, I-D = 26.2 A
■Low Gate Charge (Typ. 24.5 nC)
■Low Crss (Typ. 90 pF)
■100% Avalanche Tested
■175°C Maximum Junction Temperature Rating

ON Semiconductor

FQP50N06L

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Part#

N-Channel QFET® MOSFETN-Channel enhancement mode power MOSFET

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switched mode power supplies ]audio amplifier ]DC motor control ]variable switching power applications ]

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Datasheet

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Please see the document for details

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TO-220

English Chinese Chinese and English Japanese

October-2017

Rev.3

FQP50N06L/D

1.2 MB

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