BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PublishTime：2021-09-30

These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low voltage, low current applications such as:
●Small Servo Motor Control.
●Power MOSFET Gate Drivers.
●Switching Applications.
●Features and Benefits:
■Low Gate Threshold Voltage.
■Low Input Capacitance.
■Fast Switching Speed.
■Low Input/Output Leakage.
■High Drain-Source Voltage Rating.
■Totally Lead-Free & Fully RoHS Compliant (Notes1& 2).
■Halogen and Antimony Free. “Green” Device (Note3).
■For automotive applications requiring specific change control (i.e.:parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF16949 certified facilities), please refer to the related automotive grade (Q-suffix) part.
■This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

Brand of Product：	DIODES
Part#：	BSS123 、 BSS123-7-F 、 BSS123-13-F More Part#
Product Category：	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR More
Application：	[ Small Servo Motor Control ][ Power MOSFET Gate Drivers ][ Switching Applications ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT23
Language：	English Chinese Chinese and English Japanese
Date of Creation：	January 2021
Version Number：	Rev. 22-2
Data Encoding：	DS30366
Data Size：	530 KB

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