NPT1004D GaN Power Transistor, 28 V, 45 WDC -4 GHz
■Optimized for Pulsed,WiMAX,W-CDMA, LTE, & other light thermal load applications from DC-4GHz
■2.5 GHz Performance
■45 W P3dB CW Power
■13.5 dB Small Signal Gain
■55% Efficiency @ P3dB
■100%RF Tested
■Thermally-Enhanced Surface Mount SOIC Package
■High Reliability Gold Metallization Process
■Subject to EAR99 Export Control
■RoHS* Compliant
●Description
■The NPT1004 GaN HEMT is a power transistor optimized for DC -4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W. This transistor is assembled in an industry standard surface mount plastic package
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[ Defense Communications ][ Land Mobile Radio ][ Avionics ][ Wireless Infrastructure ][ ISM ][ VHF/UHF/L/S-Band Radar ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2021/07/04 |
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Rev. V1 |
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DC-0008218 |
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759 KB |
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