NPTB00025 GaN Power Transistor, 28 V, 25 W DC -4 GHz
■Optimized for Broadband Operation (DC-4GHz)
■25 W P3dB CW Narrow band Power
■10 W P3dB CW Broadband Power (0.05 -1 GHz)
■Characterized for Operation up to 32 V
■100% RF Tested
■Thermally-Enhanced Surface Mount Package
■High Reliability Gold Metallization Process
■Subject to EAR99 Export Control
■RoHS* Compliant
●Description
■The NPTB00025 GaN HEMT is a power transistor optimized for DC -4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package
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[ Defense Communications ][ Land Mobile Radio ][ Avionics ][ Wireless Infrastructure ][ ISM ][ VHF/UHF/L/S-Band Radar ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2021/07/04 |
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Rev. V1 |
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DC-0008203 |
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755 KB |
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