DS1258Y/AB 128k x 16 Nonvolatile SRAM
■The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors V-CC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
●FEATURES
■10-Year Minimum Data Retention in the Absence of External Power
■Data is Automatically Protected During a Power Loss
■Separate Upper Byte and Lower Byte Chip-Select Inputs
■Unlimited Write Cycles
■Low-Power CMOS
■Read and Write Access Times as Fast as 70ns
■Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
■Full ±10% Operating Range (DS1258Y)
■Optional ±5% Operating Range (DS1258AB)
■Optional Industrial Temperature Range of -40℃ to +85℃, Designated IND
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DS1258Y 、 DS1258AB 、 DS1258 、 DS1258AB-70 、 DS1258Y-70 、 DS1258AB-100 、 DS1258Y-100 、 DS1258AB-70# 、 DS1258AB-70IND 、 DS1258AB-70IND# 、 DS1258AB-100# 、 DS1258Y-70# 、 DS1258Y-70IND 、 DS1258Y-70IND# 、 DS1258Y-100# |
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Datasheet |
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Please see the document for details |
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DIP |
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English Chinese Chinese and English Japanese |
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083006 |
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