DS1250W 3.3V 4096k Nonvolatile SRAM
■The DS1250W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524.288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors V-CC for an out-of-tolerance condition. When such a conditior occurs. the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250W devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1250W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
●FEATURES
■10 years minimum data retention in the absence of external power
■Data is automatically protected during power loss
■Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory
■Unlimited write cycles
■Low-power CMOS
■Read and write access times of 100ns
■Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■Optional industrial temperature range of -40°C to +85°C, designated IND
■JEDEC standard 32-pin DIP package
■PowerCap Module (PCM) package
▲Directly surface-mountable module
▲Replaceable snap-on PowerCap provides lithium backup battery
▲Standardized pinout for all nonvolatile SRAM products
▲Detachment feature on PCM allows easy removal using a regular screwdriver
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DS1250W 、 DS9034PC+ 、 DS9034PCI+ 、 DS9034PC 、 DS1250W-100 、 DS1250W-100+ 、 DS1250WP-100+ 、 DS1250W-100IND+ 、 DS1250WP-100IND+ |
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Datasheet |
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Please see the document for details |
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DIP;EDIP;PCAP;MDT32+6;PC2+5 |
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English Chinese Chinese and English Japanese |
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12/10 |
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Rev 12/10 |
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19-5648 |
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219 KB |
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