150 W High Power Density Adapter Using SJ Si MOSFETs Evolution Board User Manual
2021-08-04
●Contents:
■This evaluation board user manual describes the 150 W High Power Density Adapter and its main parameters like efficiency, no−load input power consumption, EMI signature, transient responses, etc. The evaluation board is dedicated to present ON Semiconductor’s high performance controllers. High Power Density design is enabled when using these controllers and higher switching frequency.Higher efficiency can be achieved by using GaN HEMT devices instead of Silicon Super−junction MOSFETs.
■The evaluation board comprising of the PFC boost converter operated in the critical conduction mode (CrCM)and LLC power stage. The PFC front stage is driven by NCP1615, assures unity power factor and low input current THD. The LLC stage operates @ 260 to 300 kHz @ nominal load and it’s managed by the NCP1399 high performance current mode LLC controller. Super−junction Si MOSFETs(like FCMT199N60) can be assembled as primary side power switches. The CV/CC controller NCP4353A ensures output voltage regulation.
■Above mentioned controllers are placed on the Control Module. Secondary side utilizes synchronous rectifier (SR)from NCP4305 or NCP4306 family composed with NVMFS5C645NL 4mW 60V Power MOSFET. Whole SR stage is implemented on the daughter card for easier main power board PCB design. The discrete or integrated LLC resonant thanks implementations can be used in one board with few changes thanks to universal design.
■This evaluation board manual focuses mainly on short description of adapter operation principles and connections.For more detailed information please refer to datasheets of individual part.
●Key Features:
■Wide Input Voltage Range
■High Power Density, High Efficiency
■Low No−load Power Consumption
■X2 Capacitor Discharge Function
■Near Unity Power Factor
■Overload Protection, Thermal Protection
■Low Mains Operation Protection
■Secondary Short Circuit Protected
■Regulated Output Under any Conditions
■Capability to Implement Off−mode for
■This evaluation board user manual describes the 150 W High Power Density Adapter and its main parameters like efficiency, no−load input power consumption, EMI signature, transient responses, etc. The evaluation board is dedicated to present ON Semiconductor’s high performance controllers. High Power Density design is enabled when using these controllers and higher switching frequency.Higher efficiency can be achieved by using GaN HEMT devices instead of Silicon Super−junction MOSFETs.
■The evaluation board comprising of the PFC boost converter operated in the critical conduction mode (CrCM)and LLC power stage. The PFC front stage is driven by NCP1615, assures unity power factor and low input current THD. The LLC stage operates @ 260 to 300 kHz @ nominal load and it’s managed by the NCP1399 high performance current mode LLC controller. Super−junction Si MOSFETs(like FCMT199N60) can be assembled as primary side power switches. The CV/CC controller NCP4353A ensures output voltage regulation.
■Above mentioned controllers are placed on the Control Module. Secondary side utilizes synchronous rectifier (SR)from NCP4305 or NCP4306 family composed with NVMFS5C645NL 4mW 60V Power MOSFET. Whole SR stage is implemented on the daughter card for easier main power board PCB design. The discrete or integrated LLC resonant thanks implementations can be used in one board with few changes thanks to universal design.
■This evaluation board manual focuses mainly on short description of adapter operation principles and connections.For more detailed information please refer to datasheets of individual part.
●Key Features:
■Wide Input Voltage Range
■High Power Density, High Efficiency
■Low No−load Power Consumption
■X2 Capacitor Discharge Function
■Near Unity Power Factor
■Overload Protection, Thermal Protection
■Low Mains Operation Protection
■Secondary Short Circuit Protected
■Regulated Output Under any Conditions
■Capability to Implement Off−mode for
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