eGaN® FETs Deliver the Performance of GaN at the Price of Silicon
●Power transistors made using gallium nitride (GaN) instead of silicon have been in production for several years. GaN-based transistors can be found in over 1,000 designs in applications such as envelope tracking for 4G/LTE base stations, LiDAR systems for autonomous vehicles, Class-D audio systems, satellites, automotive lighting, wireless power transmitters, AC-DC and DC-DC power supplies, to name just a few. The designers of the earliest applications were driven to GaN based on the faster speeds that could be achieved when switching power. Faster switching can translate into smaller size, higher efficiency, and lower system cost. GaN transistors switch ten times faster than silicon devices. In order to get this enhanced performance, customers paid a premium price for the state-of-the art in power transistors.
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[ 4G/LTE base stations ][ LiDAR systems for autonomous vehicles ][ Class-D audio systems ][ satellites ][ automotive lighting ][ wireless power transmitters ][ AC-DC power supplies ][ DC-DC power supplies ] |
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2018/01/02 |
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WP017 |
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200 KB |
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