Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics
●Abstract:
■Efficient Power Conversion Corporation (EPC)'s enhancement mode gallium-nitride-on-silicon (eGaN®) FETs have been in the commercial marketplace for more than two years as replacements for silicon power MOSFETs. Superior conductivity and switching characteristics allow designers to greatly reduce system power losses, size, weight, and cost. eGaN FETs have demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. In this paper we present new results characterizing the stability of these devices under radiation exposure as well as showing their capability in high-performance DC-DC converters and operating at frequencies as high as 1 GHz.
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/16 |
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725 KB |
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