Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics
●Abstract:
■Efficient Power Conversion Corporation (EPC)'s enhancement mode gallium-nitride-on-silicon (eGaN®) FETs have been in the commercial marketplace for more than two years as replacements for silicon power MOSFETs. Superior conductivity and switching characteristics allow designers to greatly reduce system power losses, size, weight, and cost. eGaN FETs have demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. In this paper we present new results characterizing the stability of these devices under radiation exposure as well as showing their capability in high-performance DC-DC converters and operating at frequencies as high as 1 GHz.
|
|
|
|
Technical Documentation |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
2017/06/16 |
|
|
|
|
|
|
|
|
725 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
