Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FETs in DC-DC Converters
●Abstract:
■Enhancement-mode GaN-on-Si (eGaN) FETs have shown superior performance and also demonstrated their ability to operate reliably under harsh environmental conditions and high radiation conditions. This paper presents new results comparing eGaN FET performance in a clamped forward converter with an output up to 40 W with performance achieved by the latest radiation tolerant silicon power MOSFETs.
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/16 |
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446 KB |
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