HM25N50 silicon N-channel Enhanced VDMOSFET

PublishTime：2021-07-26

■General Description：
●HM25N50 the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
■Features：
●Fast Switching
●Low ON Resistance(Rdson≤0.27Ω)
●Low Gate Charge (Typical Data:64 nC)
●Low Reverse transfer capacitances(Typical: 10pF)
●100% Single Pulse avalanche energy Test

Brand of Product：	H&M SEMI
Part#：	HM25N50 More Part#
Product Category：	silicon N-channel Enhanced VDMOSFET More
Application：	[ Power switch circuit of adaptor and charger ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220AB
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/03/01
Version Number：
Data Encoding：
Data Size：	642 KB

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