25N50N-Channel Enhancement Mode MOSFET

2023-12-06
●Description
■The 25N50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS =500V,ID =25A
■RDS(ON) < 240mΩ @ VGS=10V

HUA XUAN YANG ELECTRONIC

25N50

More

Part#

N-Channel Enhancement Mode MOSFET

More

High efficiency switch mode power supplies ]

More

Datasheet

More

More

Please see the document for details

More

More

TO-3P

English Chinese Chinese and English Japanese

2023/11/17

1 MB

- The full preview is over. If you want to read the whole 7 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: