EPC90137 Development Board Quick Start Guide 80 V Half-bridge with Gate Drive, Using EPC2065 Quick Start Guide

2021-07-19
●DESCRIPTION
■The EPC90137 development board is a 80 V maximum device voltage, 25|A maximum output current, half bridge featuring the EPC2065 GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2065 by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies.
■The EPC90137 development board measures 2” x 2” and contains two EPC2065 GaN FETs and one EPC2038 GaN FET in a half bridge configuration with the uPI Semiconductor uP1966E gate driver.The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.A block diagram of the circuit is given in figure 1.

EPC

uP1966EEPC90137EPC2065EPC2038C1608X7R1E105K080ABCC0402KRX7R8BB104C1005X7R1E223K050BBC1005X5R1A475K050BCCC0402JRNPO9BN470CC0402KRX7R9BB101HMK107C7224KAHTE08051C105K4Z2ACD0603-Z5V1SDM03U40-767997-272HLF4-103185-0-044-103185-0-02GRPB032VWVN-RCM50-2030005M50-2020005ERJ-2GEJ273XRMCF0402JT20R0ERJ-2GEJ2R2XRC0402FR- 0710KLRMCF0402ZT0R00ERJ-3GEY0R00VRL0510S - R47- FRC0402FR-071RLRL0510S-R47-FRC0603FR-07120RL9774010243R5015uP1966AMCP1703T-5002E/MC74LVC1G99GT,115SN74LVC1G66DBVTBDSS2PH10 -M3BAT54KFILM734152063691216410002ERJ-2GEJ4R7X

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0603;0402;SOD523;DFN;DO220AA

English Chinese Chinese and English Japanese

2021/06/16

Revision 2.0

2.3 MB

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