QPA1003D 1 – 8 GHz 10 W GaN Power Amplifier Data Sheet

PublishTime：2021-07-14

● Qorvo's QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1–8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
● The QPA1003D is matched to 50Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands.
● The QPA1003D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
● Lead-free and RoHS compliant.
● Product Features:
■ Frequency Range: 1–8 GHz
■ P-OUT: 40 dBm @ P-IN= 15 dBm
■ PAE: 30% @ P-IN= 15 dBm
■ Large Signal Gain: 25 dB @ P-IN= 15 dBm
■ Small Signal Gain: 30 dB
■ Bias: V-D= +28 V, I-DQ= 650 mA
■ Chip Dimensions: 3.3 x 3.55 x 0.10 mm
■ Process Technology: QGaN15

Brand of Product：	QORVO
Part#：	QPA1003D 、 QPA1003DPCB4B01 More Part#
Product Category：	GaN Power Amplifier 、 wideband high power MMIC amplifier 、 Evaluation Board More
Application：	[ Electronic Warfare (EW) ][ Radar ][ Communications ][ Test Instrumentation ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	August 2019
Version Number：	Rev. D
Data Encoding：
Data Size：	452 KB

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