PSMN4R3-40MSH N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology Product data sheet
■95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching frequencies.
● Features and benefits
■Avalanche rated, 100% tested
■NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
■Low Q-RR, QG and Q-GD for high system efficiency, especially at high switching frequencies
■Low spiking and ringing for low EMI designs
■High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wirebonds, qualified to 175 °C
■Exposed leads can be wave soldered, visual solder joint inspection and high quality solderjoints
■Low parasitic inductance and resistance
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[ Secondary side synchronous rectification ][ DC-to-DC converters ][ Brushless DC motor drive ][ LED lighting ] |
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Datasheet |
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Please see the document for details |
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LFPAK33;SOT1210 |
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English Chinese Chinese and English Japanese |
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27 April 2020 |
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298 KB |
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