HGTG12N60A4D,HGTP12N60A4D,HGT1S12N60A4DS:SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

PublishTime：2021-07-02

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and150°C. The IGBT used is the development type TA49335. The diode used in anti−parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch
mode power supplies.Formerly Developmental Type TA49337.
●Features:
■>100 kHz Operation 390 V, 12 A
■200 kHz Operation 390 V, 9A
■600 V Switching SOA Capability
■Typical Fall Time 70 ns at T-J= 125°C
■Low Conduction Loss
■Temperature Compensating Saber™ Model
■Related Literature
▲TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
■These are Pb−Free Devices

Brand of Product：	ON Semiconductor
Part#：	HGTG12N60A4D 、 HGTP12N60A4D 、 HGT1S12N60A4DS More Part#
Product Category：	N-Channel IGBT 、 MOS gated high voltage switch More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO−220−3LD;TO−247−3LD;TO-247;TO-220AB;TO-263AB;D²PAK-3
Language：	English Chinese Chinese and English Japanese
Date of Creation：	April, 2020
Version Number：	Rev.3
Data Encoding：	HGT1S12N60A4DS/D
Data Size：	580 KB

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