NGTG12N60TF1G Application Note
■Beginning
▲IGBT is the abbreviation for Insulated Gate Bipolar Transistor, which operates like MOSFET, applying voltage between gate and emitter and controlling collector-emitter current. The table below summarized the similarities and differences in structure and operation compared with Power MOSFET.
▲The point is, in comparatively high voltage (V>400V) and large current application, IGBT has a less conduction loss because of its low RDS(on). By contrast, in small current area, its conduction loss may be higher than MOSFET because it has PN junction on collector structurally, which results in a forward voltage(VF) of the diode. Furthermore, in high-frequency application, switching loss of IGBT will be higher than that of MOSFET because when switching off, the accumulated carries injected from collector’s P layer into N layer do not cease to exist immediately and subsequently tf tailing occurs. Therefore, IGBT is recommended to be used in comparatively low frequency (30kHz).
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Application note & Design Guide |
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Please see the document for details |
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TO-3P;TO3-PF;TO-3PB |
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English Chinese Chinese and English Japanese |
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2021/8/6 |
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681 KB |
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