Enhancement-Mode Gallium Nitride Technology
2021-07-01
■GaN Enables New Capabilities
● Lower on resistance – lower conductance losses
● Faster devices – less switching losses and no reverse recovery
● Less capacitance – less losses when charging and discharging devices
● Less power needed to drive the circuit
● Smaller devices take up less space on the printed circuit board
● Lower cost
■GaN is Easy To Use
● Works like an N-channel MOSFET only MUCH faster
● Integration– saves space, improves efficiency, simplifies design, AND lowers cost.
● Comprehensive design support– device models, application notes, demo boards, technical article
■GaN is Cost Effective
● GaN on silicon– inexpensive substrate
● Built in existing CMOS fab– mature, low cost process
● Lowers system cost– smaller and fewer passive component
■GaN is Reliable
AEC-Q101 Qualified
● Proven technology - Phase Ten reliability report published after 85 billion hours in the field
● Secure supply chain
● GaN is inherently radiation tolerant
● Lower on resistance – lower conductance losses
● Faster devices – less switching losses and no reverse recovery
● Less capacitance – less losses when charging and discharging devices
● Less power needed to drive the circuit
● Smaller devices take up less space on the printed circuit board
● Lower cost
■GaN is Easy To Use
● Works like an N-channel MOSFET only MUCH faster
● Integration– saves space, improves efficiency, simplifies design, AND lowers cost.
● Comprehensive design support– device models, application notes, demo boards, technical article
■GaN is Cost Effective
● GaN on silicon– inexpensive substrate
● Built in existing CMOS fab– mature, low cost process
● Lowers system cost– smaller and fewer passive component
■GaN is Reliable
AEC-Q101 Qualified
● Proven technology - Phase Ten reliability report published after 85 billion hours in the field
● Secure supply chain
● GaN is inherently radiation tolerant
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