HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM
■The MRAM is designed for very high reliability. Redundant write control lines, error correction coding and low-voltage write protection ensure the correct operation of the memory and protection from inadvertent writes.
■Integrated Power Up and Power Down circuitry controls the condition of the device during power transitions. It is fabricated with Honeywell's radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low-voltage systems operating in radiation environments. The MRAM operates over a temperature range of -40°C to +105°C and is operated with 3.3 ± 0.3V and 1.8 ± 0.15V power supplies.
●FEATURES
■Fabricated on S150 Silicon On Insulator (SOI) CMOS Underlayer Technology
■150nm Process
■Total Dose 3x10⁵ and 1x10⁶ rad(Si)
■Dose Rate Upset Hardness 1x10⁹rad(Si)/s
■Dose Rate Survivability 1x10¹²rad(Si)/s
■Soft Error Rate 1x10⁻¹º upsets/bit-day
■Neutron Irradiation 1x10¹⁴ N/cm²
■No Latchup
■Read Access Time 80 ns
■Read Cycle Time 110 ns
■Write Cycle Time 140 ns
■Unlimited Read (> 1x10¹⁵ Cycles)
■15 years Data Retention
■Synchronous Operation
■Single-Bit Error Detection & Correction (ECC)
■Dual Power Supplies
■1.8 V ± 0.15V, 3.3 V ± 0.3V
■3.3V CMOS Compatible I/O
■Standard Operating Temperature Range is -40°C to +105°C
■Package: 64 Lead Shielded Ceramic Quad Flat Pack
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1 Megabit radiation hardened low power non-volatile Magneto-ResistiveRandom Access Memory 、 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM |
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Datasheet |
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Please see the document for details |
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QFP;Ceramic Quad Flat Pack |
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English Chinese Chinese and English Japanese |
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15 Sep 2014 |
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Rev.B |
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ADS-14191 |
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1.4 MB |
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