FDMA530PZ MOSFET - Power, Single P-Channel, POWERTRENCH ®
●This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on−state resistance.
●The WDFN6 (MicroFET 2 × 2) package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
●-30 V,-6.8 A, 35mΩ
■Features
●Max r-DS(on) = 35 mΩ at V-GS = − 10 V, I-D = − 6.8 A
●Max r-DS(on) = 65 mΩ at V-GS = − 4.5 V, I-D = − 5.0 A
●Low Profile − 0.8 mm Maximum − in the New Package WDFN6 (MicroFET 2 × 2 mm)
●HBM ESD Protection Level > 3k V Typical (Note 3)
●Free from Halogenated Compounds and Antimony Oxides
●RoHS Compliant
|
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
WDFN6;MicroFET 2x2 |
|
English Chinese Chinese and English Japanese |
|
9/2019 |
|
Rev.4 |
|
FDMA530PZ/D |
|
314 KB |
- +1 Like
- Add to Favorites
Recommend
- What Is The Third Generation Semiconductor?
- Corenergy Won the National Third-generation Semiconductor 2023-2024 Best New Enterprise Award
- A Strategic Partnership Established between Worldwide Leading Foundry X-FAB and A New Chinese SiC Rising Star - PN Junction Semiconductor
- Tata Consultancy Services and Renesas Partner to Open Innovation Center to Develop Next-Generation Semiconductor Solutions
- Ruimeng MS5148T 24-bit ADC Won the 2023 Electronic Information Semiconductor Industry Annual Excellent Product Award
- Nidec and Renesas Collaborate on Semiconductor Solutions for Next-Generation E-Axle for EVs
- Keysight Technologies and NCUOSC Establish Third-generation Semiconductor R&D and Test Open Laboratory
- Semipower Select Keysight‘s Power Device Testing Solution to Develop Next Generation Semiconductors
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.