FDMA008P20LZ MOSFET - Power, Single P-Channel, POWERTRENCH ®

2021-06-21
■General Description
●This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode protection against ESD.
●The WDFN6 (MicroFET 2.05×2.05) package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
●-20 V, -11 A, 13 mΩ
■ Features
● Max r-DS(on) = 13 mΩ at V-GS = −4.5 V, I-D = −2.5 A
● Max r-DS(on) = 16 mΩ at V-GS = −2.5 V, I-D = −1.4 A
● Max r-DS(on) = 20 mΩ at V-GS = −1.8 V, I-D = −1.0 A
● Max r-DS(on) = 30 mΩ at V-GS = −1.5 V, I-D = −0.85 A
● Low Profile − 0.8 mm Maximum − in the New Package WDFN6 (MicroFET 2.05 × 2.05 mm)
● HBM ESD Protection Level > 1 kV Typical (Note 3)
● Free from Halogenated Compounds and Antimony Oxides
● RoHS Compliant

ON Semiconductor

FDMA008P20LZ

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Part#

Power, Single P-Channel, POWERTRENCH ® MOSFET

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Datasheet

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Please see the document for details

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WDFN6

English Chinese Chinese and English Japanese

12/2020

Rev.2

FDMA008P20LZ/D

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