MBR3100 Device Axial Lead Rectifier

PublishTime：2021-06-17

■ This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,high−frequency inverters, free wheeling diodes, and polarity protection diodes.
■ Features
● Low Reverse Current
● Low Stored Charge, Majority Carrier Conduction
● Low Power Loss/High Efficiency
● Highly Stable Oxide Passivated Junction
● Guard−ring for Stress Protection
● Low Forward Voltage
● 175 ℃ Operating Junction Temperature
● High Surge Capacity
● Pb−Free Packages are Available*
■ Mechanical Characteristics
● Case: Epoxy, Molded
● Epoxy Meets UL 94 V−0@ 0.125 in
● Weight: 1.1 Grams (Approximately)
● Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
● Lead Temperature for Soldering Purposes: 260 ℃ Max. for 10 Seconds
● Polarity: Cathode indicated by Polarity Band

Brand of Product：	ON Semiconductor
Part#：	MBR3100 、 MBR3100G 、 MBR3100RL 、 MBR3100RLG More Part#
Product Category：	Device Axial Lead Rectifier More
Application：	[ low−voltage,high−frequency inverters ][ free wheeling diodes ][ polarity protection diodes ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DO−201AD;Axial Lead
Language：	English Chinese Chinese and English Japanese
Date of Creation：	June, 2006
Version Number：	Rev. 6
Data Encoding：	MBR3100/D
Data Size：	115 KB

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