MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 k W, R2 = 10 k W PNP Transistors
●The BRT eliminates these individual components by integrating them into a single device.
●The use of a BRT can reduce both system cost and board space.
●Features:
■ Simplifies Circuit Design
■ Reduces Board Space
■ Reduces Component Count
■ S and NSV-Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
■ These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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DTA114EM3 、 NSVDTA114EM3T5G 、 DTA114E 、 DTA114EE 、 NSVDTA114EET1G 、 DTA114EET1G 、 DTA114EM3T5G 、 DMUN2111 、 MMUN2111L 、 MUN5111 、 MUN2111T1G 、 SMUN2111T1G 、 SMUN2111T3G 、 MMUN2111LT1G 、 SMMUN2111LT1G 、 MMUN2111LT3G 、 SMMUN2111LT3G 、 MUN5111T1G 、 SMUN5111T1G 、 NSBA114EF3T5G |
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[ single device ][ external resistor bias network ][ Monolithic BiasResistor Network ] |
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Datasheet |
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Please see the document for details |
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SC−70;SOT−323;SC−59;SOT−723;TO−236;SC−75;SOT−416;SOT−23;SOT−1123 |
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English Chinese Chinese and English Japanese |
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July, 2018 |
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Rev. 9 |
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DTA114E/D |
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372 KB |
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