Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices

PublishTime：2020-11-23

This article introduces EPC Space’s family of eGaN FETs and ICs which have been specifically designed for critical applications in the high reliability or commercial satellite space environments. Some of the failure mechanisms in GaN and how they impact radiation performance are explored. Lastly, the electrical performance of eGaN transistors is compared with the most popular radiation hardened (Rad Hard) MOSFETs in the market.

Brand of Product：	EPC
Part#：	FBG20N18 、 FBG30N04 、 FBG10N30 More Part#
Product Category：	eGaN FETs 、 ICs 、 eGaN Transistors More
Application：	[ space applications ] More
Data Type：	Supplier and Product Introduction More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	July 2020
Version Number：
Data Encoding：
Data Size：	1.8 MB

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