EPC2102 – Enhancement-Mode GaN Power Transistor Half-Bridge

PublishTime：2020-10-09

Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low R-DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q-G and zero Q-RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. EPC2102 eGaN® ICs are supplied only inpassivated die form with solder bumps Die Size: 6.05 mm x 2.3 mm.
Benefits:
•High Frequency Operation
•Ultra High Efficiency
•High Density Footprint

Brand of Product：	EPC
Part#：	EPC2102 More Part#
Product Category：	Enhancement-Mode GaN Power Transistor More
Application：	[ High Frequency DC-DC ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	June, 2020
Version Number：
Data Encoding：
Data Size：	1.8 MB

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