M45PE80 Micron Serial NOR Flash Memory 3V, 8MB Page Erasable with Byte Alterability
The M45PE80 is an 8Mb (1Mb x 8) serial Flash memory device accessed by a high-speed, SPI-compatible bus.
The memory can be written or programmed 1 to 256 bytes at a time using the PAGEWRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an inte-grated PAGE ERASE cycle followed by a PAGE PROGRAM cycle.
The memory is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 4096 pages, or 1,048,576 bytes.
The memory can be erased one page at a time using the PAGE ERASE command or one sector at a time using the SECTOR ERASE command.
To meet environmental requirements, Micron offers the M45PE80 in RoHS-compliant packages, which are also lead-free.
Features:
• SPI bus-compatible serial interface
• 75 MHz clock frequency (MAX)
• 2.7–3.6V single supply voltage
• 8Mb of page-erasable Flash memory
• Page size: 256 bytes
– Page write: 11ms (TYP)
– Page program: 0.8ms (TYP)
– Page erase: 10ms (TYP)
• Sector erase: 64KB
• Hardware write protection of the bottom memory area 64KB
• Electronic signature
– JEDEC-standard, 2-byte signature (4014h)
• Deep power-down mode: 1μA (TYP)
• WRITE cycles per sector: >100,000
• Years of data retention: >20
• Packages (RoHS-compliant)
– VFQFPN8 (MP) 6mm x 5mm
– SO8W (MW ) 208 mil
– SO8N (MN) 150 mil
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Datasheet |
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Please see the document for details |
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VFQFPN8;SO8W;SO8N |
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English Chinese Chinese and English Japanese |
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03/14 |
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Rev. C |
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09005aef845660e5 |
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1.3 MB |
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