CPC3720 350V, 22Ω N-Channel Depletion-Mode FET
■Description：
●The CPC3720 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3720 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications.
●This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3720 offers a low, 22 maximum, on-state resistance at 25ºC.
●The CPC3720 has a minimum breakdown voltage of 350V_P , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
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Depletion-Mode FET 、 N-channel depletion mode field effect transistor 、 FET |
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[ Ignition Modules ][ Normally-On Switches ][ Solid State Relays ][ Converters ][ Telecommunications ][ Power Supply ] |
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Datasheet |
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Please see the document for details |
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SOT-89 |
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English Chinese Chinese and English Japanese |
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4/17/2020 |
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R01 |
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DS-CPC3720-R01 |
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233 KB |
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