R-C Thermal Model Parameters Si4431CDY_RC
●DESCRIPTION
■The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET
■These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform".
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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10-Jun-08 |
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Revision: 10-Jun-08 |
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68777 |
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209 KB |
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