SI4431CDY-T1-E3 P-Channel Enhancement Mode MOSFET

2025-04-24
The SI4431CDY-T1-E3 is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology for excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It is suitable for battery protection or other switching applications, such as load switches and uninterruptible power supplies.

HUA XUAN YANG ELECTRONIC

SI4431CDY-T1-E3

More

Part#

P-Channel Enhancement Mode MOSFET

More

Battery protection ]Load switch ]Uninterruptible power supply ]

More

Datasheet

More

More

Please see the document for details

More

More

SOP-8 (SOIC-8)

English Chinese Chinese and English Japanese

1.2 MB

- The full preview is over. If you want to read the whole 6 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: