BL4N65 4A,650V N-Channel Power Mosfet Production specification

PublishTime：2022-08-10

●FEATURES
■RDS(ON) =2.5Ω@ VGS = 10V
■Ultra low gate charge ( typical 15 nC )
■Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
■Fast switching capability
■Avalanche energy specified
■Improved dv/dt capability, high ruggedness

Brand of Product：	Galaxy Microelectronics
Part#：	BL4N65 More Part#
Product Category：	N-Channel Power Mosfet More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220AB
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2019/10/14
Version Number：	Rev.A
Data Encoding：	X166
Data Size：	523 KB

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