BL4N65F 4A,650V N-Channel Power Mosfet Production specification
●FEATURES
■RDS(ON) =2.5Ω@ VGS = 10V
■Ultra low gate charge ( typical 15 nC )
■Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
■Fast switching capability
■Avalanche energy specified
■Improved dv/dt capability, high ruggedness
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Datasheet |
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Please see the document for details |
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ITO-220AB |
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English Chinese Chinese and English Japanese |
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2019/10/14 |
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Rev.A |
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X100 |
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454 KB |
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