MITSUBISHI SEMICONDUCTOR MGF1403B LOW NOISE GaAs FET
●DESCRIPTION：
The MGF1403B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
●FEATURES
■Low noise figure NFmin = 1.8 dB (TYP.) @ f = 12 GHz
■High associated gain Gs = 10.5 dB (TYP.) @ f = 12 GHz
■High reliability and stability
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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NOV.'97 |
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447 KB |
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