2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
●Low saturation voltage: V-CE (sat) = −0.5 V (max) (I-C= −1 A)
●High speed switching time: t-stg= 1.0 μs (typ.)
●Small flat package
●PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
●Complementary to 2SC2873
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[ Power Amplifier ] |
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Datasheet |
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Please see the document for details |
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SC-62;2-5K1A |
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English Chinese Chinese and English Japanese |
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2013-11-01 |
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273 KB |
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