AS6C4008-70SAN 512k x 8Low Power SRAM Data Sheet
CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C4008-70SAN is well designed for very low
power system applications, and particularly well
suited for battery back-up nonvolatile memory
application.
The AS6C4008-70SAN operates from a single
power supply of 2.7V ~ 5.5V and all inputs and
outputs are fully TTL compatible
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[ very low power system applications ][ battery back-up nonvolatile memory application ] |
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Datasheet |
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Lead Free 、 Pb free 、 ROHS |
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Please see the document for details |
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Automotive |
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SOP |
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English Chinese Chinese and English Japanese |
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Mar. 2019 |
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Rev 1.0 |
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906 KB |
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