NB7V52M D Flip Flop Product Overview
●The NB7V52M is a 10GHz differential Data and Clock D flip-flop with a Differential asynchronous Reset. The differential D/Db, CLK/CLKb and R/Rb inputs incorporate internal 50-ohm termination resistors and will accept LVPECL, CML, LVDS logic levels.
When Clock transitions from Low to High, Data will be transferred to the differential CML outputs. The differential Clock inputs allow the NB7V52M to also be used as a negative edge triggered device. The 16mA differential CML outputs provide matching internal 50- ohm terminations and produce 400 mV output swings when externally terminated with a 50-ohm resistor to VCC. The NB7V52M is offered in a low profile 3mm x 3mm 16-pin QFN package.
●Features
■Maximum Input Clock Frequency > 10GHz Typical
■Random Clock Jitter < 0.8ps RMS
■ 30ps Typical Rise and Fall Times
■ Differential CML Outputs, 400mV peak-to-peak, typical
■ Operating Range: VCC = 1.71V to 2.625V with VEE = 0V
■ Internal 50-ohm Input Termination Resistors
■-40C to +85C Ambient Operating Temperature
■ Instrumentation
[ ATE ][ Instrumentation ] |
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
QFN-16 |
|
English Chinese Chinese and English Japanese |
|
3/29/2019 |
|
|
|
|
|
180 KB |
- +1 Like
- Add to Favorites
Recommend
- What Is The Third Generation Semiconductor?
- Corenergy Won the National Third-generation Semiconductor 2023-2024 Best New Enterprise Award
- A Strategic Partnership Established between Worldwide Leading Foundry X-FAB and A New Chinese SiC Rising Star - PN Junction Semiconductor
- Tata Consultancy Services and Renesas Partner to Open Innovation Center to Develop Next-Generation Semiconductor Solutions
- Ruimeng MS5148T 24-bit ADC Won the 2023 Electronic Information Semiconductor Industry Annual Excellent Product Award
- Nidec and Renesas Collaborate on Semiconductor Solutions for Next-Generation E-Axle for EVs
- Keysight Technologies and NCUOSC Establish Third-generation Semiconductor R&D and Test Open Laboratory
- Semipower Select Keysight‘s Power Device Testing Solution to Develop Next Generation Semiconductors
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.