A Systematic Approach for Testing Todays Power Semiconductors to obtain a generally applicable characterization
Abstract: New characterization and testing methods have been developed with respect to the state of the art in power semiconductors. Their knowledge and use is decisive for reliable and efficient simulation and design of power electronic converters. This paper shows principles of characterization in a systematic approach. Their meaning for com-ponent applications is derived. Furtherly testing methods to gain the required data are derived. Testers recently developed for characterization and quality assurance measure-ments and results obtained with them are presented. Thus this paper shows the links between characterization, testing and application for fast switching power semiconduc-tors. It focusses on insulated gate bipolar transistors (IGBT) as typical devices of this type.
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POWER SEMICONDUCTORS 、 fast switching power semiconductors 、 insulated gate bipolar transistors (IGBT) 、 Testers |
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/11/18 |
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IXAN0046 |
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944 KB |
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