功率半导体芯片 (Power Semiconductor Chips)
●通态压降低
●具有很强的抗热疲劳能力
●阴极铝层厚度 10 微米以上
●台面双层保护
■Features
●Low forward voltage
●Strong thermal fatigue resistance
●The thickness of cathode aluminum layer is above 10μm
●Double layer protections on mesa
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2020/7/23 |
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1 MB |
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