Insulated Gate Bipolar Transistor (IGBT) Basics
●The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It’s a functional integration of Power MOSFET and BJT devices in monolithic form. It combines the best attributes of both to achieve optimal device characteristics [2].
●The IGBT is suitable for many applications in power electronics, especially in Pulse Width Modulated (PWM) servo and three-phase drives requiring high dynamic range control and low noise. It also can be used in Uninterruptible Power Supplies (UPS), Switched-Mode Power Supplies (SMPS), and other power circuits requiring high switch repetition rates. IGBT improves dynamic performance and efficiency and reduced the level of audible noise. It is equally suitable in resonant-mode converter circuits. Optimized IGBT is available for both low conduction loss and low switching loss.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/11/18 |
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IXAN0063 |
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260 KB |
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