3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY
●Abstract: DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A MOSFETS driven by DEIC420 gate drive ICs, in a half-bridge operating in Class-D with limited frequency agility, to generate 3kW of output power at 83.5% efficiency. A pair of modules generates 5KW at 89% efficiency using a total of four DE375-102N12A RF MOSFETs. This technical note discussed the design of this RF generator and supporting SPICE models.
●INTRODUCTION: Many industrial processes require several kilowatts at one or more of the ISM frequencies. In addition these generators often require some level of frequency agility. Given this need DEI/IXYS has developed a prototype RF generator for very high power RF at ISM frequencies. The prototype generator uses a pair of DE375-102N12A MOSFETS driven by DEIC420 gate drive ICs in a half-bridge topology operating Class-D at 13.56MHz. We have achieved a power output of 3KW at 83.5% efficiency. A pair of modules generates 5KW at 89% efficiency using a total of four DE375-102N12A RF MOSFETs. The design consists of three modules: The gate driver, half-bridge and the output tank. The power output was adjusted via the high voltage supply. Frequency adjustments are made via the input clock. In this paper we will discuss each of the three key sections in detail as well as a complete system spice model. In addition in some applications the generator must be capable of some frequency agility. This capability allows some frequency adjustments to assist in the tuning operation. This topic will also be addressed in each section. The first section is the gate driver.
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HALF-BRIDGE CLASS-D RF GENERATORS 、 RF generator 、 Half-bridge RF Gate Drive 、 Gate Drive Module |
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2002 |
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Rev 1 |
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Doc#9300-0008 |
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681 KB |
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