IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications
ABSTRACT: In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the introduction of collector shorts. Since this modification made the device behave like a very low R-DS(on) MOSFET, IXYS coined the acronym BiMOSFET™ to distinguish this new class of switches. Rated at 1600V, its R-DS(on) is less than 10% of an equivalent voltage rated MOSFET yet it has a switching time of less than 200ns. Consequently it will supplant conventional IGBTs and MOSFETs in high voltage applications running at frequencies from 10kHz to 75kHz and higher using soft-switching techniques.
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[ sweep circuits ][ radar pulse modulators ][ capacitor discharge circuits ][ high voltage switch-mode power supplies ] |
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/11/18 |
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IXAN0016 |
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484 KB |
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