PMH1200UPE 30 V, P-channel Trench MOSFET Product data sheet
●General description
■P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
●Features and benefits
■Low threshold voltage
■Very fast switching
■Trench MOSFET technology
■ElectroStatic Discharge (ESD) protection > 2 kV HBM
■Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
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P-channel Trench MOSFET 、 P-channel enhancement mode Field-Effect Transistor (FET) 、 Field-Effect Transistor (FET) |
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[ Relay driver ][ High-speed line driver ][ Low-side load switch ][ Switching circuits ] |
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Datasheet |
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Please see the document for details |
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DFN0606-3;SOT8001 |
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English Chinese Chinese and English Japanese |
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4 March 2019 |
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v.1 |
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PMH1200UPE v.1 |
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523 KB |
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