IS61/64WV2568FALL IS61/64WV2568FBLL 256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
The ISSIIS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256Kwords by 8bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power devices.
When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory.
The IS61/64WV2568FALL/FBLLare packaged in the JEDEC standard 44-pin TSOP (TYPE II), 36-pin SOJ and 36-ballmini BGA (6mm x 8mm).
●KEY FEATURES
■High-speed access time: 8ns, 10ns, 12ns
■Low Active Current: 35mA (Max., 10ns, I-temp)
■Low Standby Current: 10mA (Max., I-temp)
■Single power supply
▲1.65V-2.2V VDD(IS61/64WV12816EFALL)
▲2.4V-3.6V VDD (IS61/64WV12816EFBLL)
■Three state outputs
■Industrial and Automotive temperature support
■Lead-free available
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IS61WV2568FALL 、 IS61WV2568FBLL 、 IS64WV2568FALL 、 IS64WV2568FBLL 、 IS61WV2568FBLL-10BI 、 IS61WV2568FBLL-10BLI 、 IS61WV2568FBLL-10KLI 、 IS61WV2568FBLL-10TLI 、 IS64WV2568FALL-12BA3 、 IS64WV2568FALL-12BLA3 、 IS64WV2568FALL-12KLA3 、 IS64WV2568FALL-12CTLA3 、 IS64WV2568FBLL-10BA3 、 IS64WV2568FBLL-10BLA3 、 IS64WV2568FBLL-10KLA3 、 IS64WV2568FBLL-10CTLA3 、 IS61WV2568FALL-10BI 、 IS61WV2568FALL-10BLI 、 IS61WV2568FALL-10KLI 、 IS61WV2568FALL-10TLI |
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Datasheet |
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Please see the document for details |
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44-Pin TSOP-II;36-Pin SOJ;BGA |
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English Chinese Chinese and English Japanese |
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04/27/2018 |
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Rev. A |
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1.1 MB |
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