Dual P-Channel MOSFET CJ3139KDW, Using Advanced Power Trench Process to Optimize the RDS(ON)
This JSCJ Dual P-Channel MOSFET CJ3139KDW has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package.
FEATURE
High-Side Switching
Low On-Resistance
Low Threshold
Fast Switching Speed
APPLICATION
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Maximum ratings (Ta=25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
MARKING
39K=Device code
Solid dot1=Pin1 indicator
Solid dot2= Green molding compound device.
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