Dual P-Channel MOSFET CJ3139KDW, Using Advanced Power Trench Process to Optimize the RDS(ON)

2023-11-08 JSCJ
Dual P-Channel MOSFET,MOSFET,CJ3139KDW

This JSCJ Dual P-Channel MOSFET CJ3139KDW has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package.



FEATURE
High-Side Switching
Low On-Resistance
Low Threshold
Fast Switching Speed


APPLICATION
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers


Maximum ratings (Ta=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)


Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.


MARKING

39K=Device code
Solid dot1=Pin1 indicator
Solid dot2= Green molding compound device.

  • +1 Like
  • Add to Favorites

Recommend

This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.

Contact Us

Email: